'l.e.'iis.u tsztnl-conduetoi ^product*., dnc. (-/ tj 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfm12n08, RFM12N10, rfp12n08, rfp12n10 12a, 80vand 100v, 0.200 ohm, n-channel power mosfets these are n-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. ordering information features ? 12a, 80v and 100v ' rds(on) = 0-200ii ? related literature symbol d o part number rfm12n08 RFM12N10 rfp12n08 rfp12n10 package to-204aa to-204aa to-220ab to-220ab brand rfm12n08 RFM12N10 rfp12n08 rfp12n10 note: when ordering, use the entire part number. packaging jedec to-204aa jedec to-220ab drain (flange) drain (tab) gate (pin 1) source (pin 2) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
rfm12n08, RFM12N10, rfp12n08, rfp12n10 absolute maximum ratings tc = 25c, unless otherwise specified rfm12n08 RFM12N10 rfp12n08 rfp12n10 units drain to source voltage (note 1) vdss 80 100 80 100 v drain to gate voltage (rgs = 20kq) (note 1) vdgr 80 100 80 100 v continuous drain current irj 12 12 12 12 a pulsed drain current (note 3) idm 30 30 30 30 a gate to source voltage vqs 20 20 20 20 v maximum power dissipation pp 75 75 60 60 w linear derating factor 0.6 0.6 0.48 0.48 w/c operating and storage temperature tj tsjq -55 to 150 -55 to 150 -55 to 150 -55 to 150 c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s tl 300 300 300 300 package body for 10s, see techbrief 334 tpkg 260 260 260 260 caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. tj = 25cto 125c. c c electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage rfm12n08, rfp12n08 RFM12N10, efp12n10 gate threshold voltage zero gate voltage drain current gate to source leakage current drain to source on resistance (note 2) drain to source on voltage (note 2) turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance thermal resistance junction to case symbol bvdss vgs(th) !dss 'gss rds(on) vds(on) td(on) tr 'd(off) tf ciss cqss crss rejc test conditions id = 250na, vgs = ov vgs = vds. id = 250(ia (figure 8) vds = rated bvdss, vgs = ov vds = 0.8 x rated bvdssi tc = 125c vgs = 2ov, vds = ov id = 12a, vgs = 10v (figures 6, 7) id = 12a,vgs = 10v vdd = sov, id = 6a, rg = son, vgs = iov, rl = sn, (figures 10, 11, 12) vds = 25v, vgs = ov, f = 1 mhz (figure 9) rfm12n08, RFM12N10 rfp12n08, rfp12n10 min 80 100 2 - - - - - - - - - - - - - - typ - - - - - - - - 45 250 85 100 - - - - - max - - 4 1 25 100 0.200 2.4 70 375 130 150 850 300 150 1.67 2.083 units v v v ha ^a na n v ns ns ns ns pf pf pf c/w c/w source to drain diode specifications parameter source to drain voltage (note 2) reverse recovery time symbol vsd trr test conditions isd = 6a isd = 4a, dlsd/dt = 100a/j1s min - - typ - 150 max 1.4 - units v ns
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